Skip to main content

Transistors — Part 2 MCQs with Explanations

Practice high-yield Electrical Engineering MCQs on Transistors — Part 2 with worked academic solutions for WAPDA, NTDC, IESCO, LESCO, PPSC, FPSC.

Questions
40
Difficulty Level
Exam-Level
Target Exams
WAPDA, NTDC, IESCO...
Estimated Time
48 mins
Exam-Level WAPDA NTDC IESCO LESCO PPSC FPSC
Verified for Commission Syllabus • Oct 14, 2026
40

Verified Practice Questions

Interactive test mode with detailed academic worked solutions

Live Progress | 0/40 answered
✓ 0 correct ✗ 0 wrong 0% score
Question 1 of 40
★ WAPDA ★ NTDC

The leakage current in CE arrangement is ___________ that in CB arrangement

Question 2 of 40
★ WAPDA ★ NTDC

The arrow in the symbol of a transistor indicates the direction of ___________

Question 3 of 40
★ WAPDA ★ NTDC

In the above question, what are the values of cut-off frequencies?

Question 4 of 40
★ WAPDA ★ NTDC

In a parallel LC circuit, if the signal frequency is decreased below the resonant frequency, then ___________

Question 5 of 40
★ WAPDA ★ NTDC

In parallel resonance, the circuit impedance is ___________.

Question 6 of 40
★ WAPDA ★ NTDC

Transistor biasing is generally provided by a ___________

Question 7 of 40
★ WAPDA ★ NTDC

The value of VBE ___________

Question 8 of 40
★ WAPDA ★ NTDC

If the value of collector current IC increases, then the value of VCE ___________

Question 9 of 40
★ WAPDA ★ NTDC

If the temperature increases, the value of VCE ___________

Question 10 of 40
★ WAPDA ★ NTDC

Frequencies above ___________ kHz are called radio frequencies

Question 11 of 40
★ WAPDA ★ NTDC

The phase difference between the input and output voltages in a common base arrangement is ___________

Question 12 of 40
★ WAPDA ★ NTDC

The voltage gain of a transistor connected in common collector arrangement is ___________

Question 13 of 40
★ WAPDA ★ NTDC

The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ___________

Question 14 of 40
★ WAPDA ★ NTDC

The input impedance of a transistor connected in ___________ arrangement is the highest

Question 15 of 40
★ WAPDA ★ NTDC

The output impedance of a transistor connected in ___________ arrangement is the highest

Question 16 of 40
★ WAPDA ★ NTDC

The power gain in a transistor connected in ___________ arrangement is the highest

Question 17 of 40
★ WAPDA ★ NTDC

The voltage gain in a transistor connected in ___________ arrangement is the highest

Question 18 of 40
★ WAPDA ★ NTDC

In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

Question 19 of 40
★ WAPDA ★ NTDC

The Q of a tuned amplifier is generally ___________

Question 20 of 40
★ WAPDA ★ NTDC

The value of ß for a transistor is generally ___________

Question 21 of 40
★ WAPDA ★ NTDC

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________

Question 22 of 40
★ WAPDA ★ NTDC

The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________

Question 23 of 40
★ WAPDA ★ NTDC

For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line

Question 24 of 40
★ WAPDA ★ NTDC

The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

Question 25 of 40
★ WAPDA ★ NTDC

The Q of an LC circuit is given by ___________

Question 26 of 40
★ WAPDA ★ NTDC

Tuned class C amplifiers are used for RF signals of ___________

Question 27 of 40
★ WAPDA ★ NTDC

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________

Question 28 of 40
★ WAPDA ★ NTDC

A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?

Question 29 of 40
★ WAPDA ★ NTDC

In a npn transistor, ___________ are the minority carriers

Question 30 of 40
★ WAPDA ★ NTDC

ICEO = () ICBO

Question 31 of 40
★ WAPDA ★ NTDC

In a pnp transistor, the current carriers are ___________

Question 32 of 40
★ WAPDA ★ NTDC

The base of a transistor is ___________ doped

Question 33 of 40
★ WAPDA ★ NTDC

The collector of a transistor is ___________ doped

Question 34 of 40
★ WAPDA ★ NTDC

The emitter of a transistor is ___________ doped

Question 35 of 40
★ WAPDA ★ NTDC

The base resistor method is generally used in

Question 36 of 40
★ WAPDA ★ NTDC

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

Question 37 of 40
★ WAPDA ★ NTDC

The number of depletion layers in a transistor is ___________

Question 38 of 40
★ WAPDA ★ NTDC

The element that has the biggest size in a transistor is ___________

Question 39 of 40
★ WAPDA ★ NTDC

The input impedance of a transistor is ___________

Question 40 of 40
★ WAPDA ★ NTDC

The value of a of a transistor is ___________

✓ Link copied to clipboard
Continue Your Practice

A_C Fundamentals_ Circuits And Circuit Theory — Part 1

Master the next curriculum module with 40 exam-standard MCQs.

Next Practice Set →

💡 Examiner's Advisory for Electrical Engineering

In competitive commission exams (FPSC, PPSC, KPPSC, SPSC, CSS, PMS), questions are frequently phrased with distractor options designed to catch rote learners. Whenever you answer an MCQ, read the Detailed Academic Explanation and Conceptual Anchor to understand why the remaining options are incorrect.

More Modules in Electrical Engineering

View All →
📚

Study Guides

Topic summaries and syllabus breakdown

Explore Guides →
🎯

Complete Library

Search through 78,000+ verified MCQs

Browse Library →
📱

Mobile App

Offline mock tests and instant bookmarks

Get Mobile App →