Electronic Devices And Circuits — Part 2 MCQs with Explanations

All of the above is the correct answer to “As compared to bipolar junction transistor, a FET”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Silicon is the correct answer to “The most commonly used semiconductor material is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

A nickel an iron alloy having high permeability is the correct answer to “Permalloy is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Ferroelectric characteristic only above the curie point is the correct answer to “Which one of the following is not a characteristic of a ferroelectric material”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Schottky diode is the correct answer to “In which of these is reverse recovery time nearly zero”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Normal to both current and magnetic field is the correct answer to “Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Must be given to an electron move to conduction band is the correct answer to “Fermi level is the amount of energy in which”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Diffusion process is the correct answer to “In monolithic ICs, all the components are fabricated by”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

should not exceed one third the breakdown voltage is the correct answer to “When diodes are connected in series to increase voltage rating the peak inverse voltage per junction”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

a decrease in the threshold voltage is the correct answer to “If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Higher noise is the correct answer to “The main drawback of JFET is its”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Moves towards the conduction band is the correct answer to “If a donor type impurity is added to the semiconductor, then at a given temperature, the Fermi Level”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

0.82 V is the correct answer to “In PN junction diode, P side is doped with acceptor concentration of 2 × 10 16 cm -3 , N side is doped donor concentration of 5 × 10 17 cm -3 . The contact potential of diode is: Assume thermal equivalent voltage equal to 26 mV and intrinsic carrier concentration equal to 1.45 × 10 10 cm -3 .”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Varactor diode is the correct answer to “A diode which resembles a voltage variable capacitor is known as”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

extrinsic property is the correct answer to “Find the wrong statement: specific heat of a material is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Increases as the reverse bias is decreased is the correct answer to “The capacitance of a reverse-biased PN junction”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Vacuum tubes is the correct answer to “Thermionic emission occurs in”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

poor is the correct answer to “The stability of fixed bias circuit”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Silicon is the correct answer to “The Integrated Circuit used in computers is made of which element”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

N-type is the correct answer to “The semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated end is positive, the semiconductor is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

depletion width in P-region will decrease and contact potential will increase is the correct answer to “In PN-junction diode, if doping concentration of acceptor atoms in P-region is increased then”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

current flow only when a negative input cut-off voltage bias is crossed is the correct answer to “The output current versus input voltage transfer characteristics of an n-channel JFET is such that there is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Reactance is the correct answer to “. . . . . . . . of the varactor-diode changes with the change in applied voltage.”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

10°C rise in temperature is the correct answer to “The reverse saturation current of a silicon diode doubles for every”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Few hundred microampers is the correct answer to “The leakage current in CE configuration may be around”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

1000°C/W is the correct answer to “For the 2N338 transistor, the manufacturer specifies P max = 100 mW at 25°C free air temperature and the maximum junction temperature, T jmax = 125°C. Its thermal resistance is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

1127.27 nm, 1850.75 nm is the correct answer to “The band gap energies for silicon and germanium photodiodes are 1.1 eV and 0.67 eV respectively, their cutoff wavelength respectively would be:”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Both S1 and S2 are FALSE is the correct answer to “Consider the following statements S 1 and S 2 . S 1 : The threshold voltage (V T ) of a MOS capacitor decreases with increase in gate oxide thickness. S 2 : The threshold voltage (V T ) of a MOS capacitor decreases with increase in substrate doping concentration. Which one of the following is correct”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

S1 and S3 are correct is the correct answer to “Consider the following statements S1: Silicon is indirect bandgap semiconductor S2: Germanium is direct bandgap semiconductor S3: Gallium Arsenide is direct bandgap semiconductor S4: Indium Phosphide is indirect bandgap semiconductor”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

CB amplifier has low input impedance and a low current gain is the correct answer to “Which of the following statements are correct for the basic transistor amplifier configurations”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

1.12 eV is the correct answer to “The band gap in eV of Si at 300 K is:”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers is the correct answer to “Swept-out voltage in PIN diode happens when PIN diode is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Diode get destroyed is the correct answer to “What happens to a diode, if the PIV rating of the diode is exceeded”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

0.13 MeV is the correct answer to “The energy required to change the speed of one electron from rest to 0.6c is nearly:”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

One electron is the correct answer to “When silicon is doped with arsenic, each arsenic atom will give the crystal . . . . . . . .”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

n+ -doped is the correct answer to “In the fabrication of n-p-n transistor in an IC, the buried layer on the p-type substrate is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

diffusion in forward bias, drift in reverse bias is the correct answer to “Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

To interconnected the various circuit elements is the correct answer to “The main purpose of the metallization process is”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

an active load is the correct answer to “A gate to drain connected enhancement mode MOSFET is an example of”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.

Less than 5% is the correct answer to “How much "holes carrier" emitted by the emitter recombines with the electrons in the base in a PNP type transistor”. This question is standard in competitive examination syllabi for Electronic Devices And Circuits.