Vlsi Design And Testing — Part 1 MCQs with Explanations

Source is the correct answer to “Contact cuts are made in . . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Either Diffusion or Ion Implantation Process is the correct answer to “The dopants are introduced in the active areas of silicon by using which process”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Aluminium is the correct answer to “Which is used for the interconnection”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Small feature size is the correct answer to “What are the advantages of E-beam masks”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Plasma is the correct answer to “In nMOS fabrication, etching is done using . . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Resistors is the correct answer to “Depletion mode MOSFETs are more commonly used as . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Increases is the correct answer to “Increasing Vsb . . . . . . . . the threshold voltage.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

BiCMOS is the correct answer to “Which process produces a circuit which is less prone to latch-up effect”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists is the correct answer to “Positive photo resists are used more than negative photo resists because . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Diffusion is the correct answer to “N-well is formed by . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Cg(MOS) = Cbase(bipolar) is the correct answer to “Which of the following is true when inputs are controlled by equal amounts of charge”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

All of the mentioned is the correct answer to “Switching speed of a MOS device depends on . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Symmetrical is the correct answer to “MOS transistor structure is . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Low resistance is the correct answer to “In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Etched field-oxide isolation or Local Oxidation of Silicon is the correct answer to “The isolated active areas are created by technique known as . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Increases input capacitance is the correct answer to “Increasing the transconductance . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Low impedance path is the correct answer to “Latch-up is the generation of . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Output current and input voltage is the correct answer to “Transconductance gives the relationship between . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Non saturation resistive region is the correct answer to “If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Metal layer is the correct answer to “Interconnection pattern is made on . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Lightly doped n-type epitaxial layer on p-Substrate is the correct answer to “The n-well collector is formed by . . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Remains fairly constant is the correct answer to “The current Ids . . . . . . . . as Vds increases.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Increases is the correct answer to “As die size shrinks, the complexity of making the photomasks . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

To perform logic functions is the correct answer to “In BiCMOS, MOS switches are used to . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Low output capacitance is the correct answer to “Fast gate can be built by keeping . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Channel region is the correct answer to “If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

All of the mentioned is the correct answer to “CMOS technology is used in developing which of the following”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Vgs = Vds = Vs = 0 is the correct answer to “What is the condition for non conducting mode”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Source is the correct answer to “For depletion mode transistor, gate should be connected to . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Both zero static power dissipation and high input impedance is the correct answer to “The MOSFETS are arranged in this configuration to provide . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Increases is the correct answer to “Increasing fan-out . . . . . . . . the propagation delay.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Switches connected in series is the correct answer to “Pass transistors are transistors used as . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Limited current sourcing is the correct answer to “What is the disadvantage of the MOS device”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Vds is the correct answer to “Ids depends on . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

True is the correct answer to “BiCMOS inverter requires high load current sourcing.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Effective gate voltage is the correct answer to “Surface mobility depends on . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Chemical vapour deposition is the correct answer to “Heavily doped polysilicon is deposited using . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

False is the correct answer to “Substrate doping level should be decreased to avoid the latch-up effect.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Both BJT and MOSFETs is the correct answer to “The transistors used in BiCMOS are . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Doping impurities is the correct answer to “The . . . . . . . . is used to reduce the resistivity of poly silicon.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.