Vlsi Design And Testing — Part 2 MCQs with Explanations

Bipolar is the correct answer to “Which has better I/A”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Ultraviolet light is the correct answer to “In CMOS fabrication, the photoresist layer is exposed to . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Gate switching delay and gate power dissipation is the correct answer to “Speed power product is measured as the product of . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Finite off resistance is the correct answer to “In CMOS inverter, transistor is a switch having . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Current source is the correct answer to “If both the transistors are in saturation, then they act as . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

False is the correct answer to “Substrate bias voltage is positive for nMOS.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

All of the mentioned is the correct answer to “What are the advantages of BiCMOS”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Pull up is the correct answer to “In nMOS inverter configuration depletion mode device is called as . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

All of the mentioned is the correct answer to “The BiCMOS are preferred over CMOS due to . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

True is the correct answer to “Depletion mode transistor should be large.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Decreased is the correct answer to “BJT gain should be . . . . . . . . to avoid latch-up effect.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Error in variation is the correct answer to “The difficulty in achieving high doping concentration leads to . . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

$$\frac{{Vds}}{L}$$ is the correct answer to “Eds is given by . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Light sensitive polymer is the correct answer to “Photoresist layer is formed using . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Two is the correct answer to “How many transistors might bring up latch up effect in p-well structure”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Vds lesser than Vgs - Vt is the correct answer to “What is the condition for non saturated region”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

0.5Vdd is the correct answer to “If βn = βp, then Vin is equal to”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Unidirectional is the correct answer to “BiCMOS is . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Less is the correct answer to “When the threshold voltage is more, leakage current will be”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

High gm is the correct answer to “A fast circuit requires . . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Faster is the correct answer to “What is the feature of vector scanning”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Guard rings is the correct answer to “What can be introduced to reduce the latch-up effect”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Vin = 1 is the correct answer to “In depletion mode pull-up, dissipation is high since current flows when”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Hundred logic gates is the correct answer to “Medium scale integration has . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

CMOS is the correct answer to “Which has high input resistance”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

$$\frac{L}{v}$$ is the correct answer to “Transit time can be given by”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

True is the correct answer to “SIlicon-di-oxide is a good insulator.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

True is the correct answer to “Gate minimization technique is used to simplify the logic.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Open, Closed is the correct answer to “Enhancement mode device acts as . . . . . . . . . switch, depletion mode acts as . . . . . . . . switch.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

False is the correct answer to “BiCMOS has lower standby leakage current.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Photolithography is the correct answer to “Silicon oxide is patterned on a substrate using . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Increased fabrication Complexity is the correct answer to “Which of the following is the drawback of the BiCMOS circuits”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Polysilicon is the correct answer to “In MOS transistors . . . . . . . . . is used for their gate.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

False is the correct answer to “Overheating in device occurs due to less number of resistors per unit area.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

$$\frac{8}{1}$$ is the correct answer to “An inverter driven through one or more pass transistors has $$\frac{{Zp.u}}{{Zp.d}}$$ ratio of . . . . . . . .”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

False is the correct answer to “BiCMOS has low power dissipation.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Saturation is the correct answer to “If n-transistor conducts and has large voltage between source and drain, then it is said to be in . . . . . . . . region.”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Low input impedance is the correct answer to “What are the features of BiCMOS”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Vds > (Vgs - Vth) is the correct answer to “When the channel pinches off”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.

Insulating is the correct answer to “What kind of substrate is provided above the barrier to dopants”. This question is standard in competitive examination syllabi for Vlsi Design And Testing.